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MITSUBISHI TRANSISTOR MODULES
QM100DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100DY-24BK
* * * * *
IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 4-6.5 930.25 B2X B2
E2 B2
E2
6 480.25 15 62
B2X
C2E1
E2
30
C1 C2E1 E2
B1 E1
C1
10.5 6
B1X
9
B1X 14 8 15.3 3 25 25 21.5 3 8 1.8 Tab#110, t=0.5
E1 B1
3-M6
17
8
17
8
17
16
LABEL
7
30
37
9.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 100 100 800 5 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1,96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=100A, IB=130A -IC=100A (diode forward voltage) IC=100A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=100A, IB1=0.2A, -IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 100 4.0 4.0 1.8 -- 2.5 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
VCE=10V
COLLECTOR CURRENT IC (A)
160
IB=200mA
IB=130mA
IB=400mA
120
80
IB=40mA
DC CURRENT GAIN hFE
VCE=4.0V
IB=20mA
40
0
Tj=25C Tj=125C 4 5 7 10 1 2 3 4 5 7 10 2 2 34
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
3 2 VCE=4.0V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1
BASE CURRENT IB (A)
SATURATION VOLTAGE
10 0 7 5 4 3 2 10 -1 7 5 4 3 2.6
VBE(sat)
VCE(sat)
IB=130mA Tj=25C Tj=125C 4 5 7 10 1 2 3 4 5 7 10 2 2 34
3.0
3.4
3.8
4.2
4.6
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 IC=130A 4 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
3 IC=100A 2 IC=50A
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1
ts tf
ton
1 Tj=25C Tj=125C 0 3 5 7 10 -2 2 3 5 7 10 -12 3 5 7 10 0 2 3
VCC=600V IB1=200mA IB2=-2A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2
REVERSE BIAS SAFE OPERATING AREA
240
ts, tf (s)
ts 10 1 7 5 4 3 2 10 0 7 5 4 3
COLLECTOR CURRENT IC (A)
200 160 120 80 40 0
SWITCHING TIME
tf
VCC=600V IB1=200mA IC=100A Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 23
Tj=125C -IB2=2A 0 200 400 600 800 1000 1200 1400
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 100 90 100s 1ms DC 200s 50s
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (C)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2 3 5 7 10 2 0.25
0.20
Zth (j-c) (C/ W)
0.15
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.10
0.05 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0
Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1000
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=0.2A 3 -IB2=2.0A 2 Irr (A), Qrr (c) 10 2 7 5 3 2 10 1 Irr 10 2
800
10 1 trr (s)
Feb.1999
600
400
Qrr
200
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 7 5 trr 3 Tj=25C 2 Tj=125C 10 0 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 5 710 1 2 3 1.0
0.8 Zth (j-c) (C/ W)
0.6
0.4
0.2 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s)

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